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| 2SB1412 Elektronische Bauelemente RoHS Compliant Product PNP Silicon Low Frequency Transistor Features 1)Low VCE(sat). 2)Excellent DC current gain characteristics 3)Complements the 2SD2118 6.6 5.3 0.2 0.2 0.1 D-Pack 2.3 0.5 0.1 0.1 !Absolute maximum ratings (Ta=25C) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current VCBO VCEO VEBO IC -30 -20 -6 -5 -10 0.5 2 PC 1 10 2SB1326 Junction temperature Storage temperature Tj Tstg 1 150 -55~+150 V V V 0.2 2.5 A(Pulse) 1 W W W W(TC=25C) W 3 2 0.7 0.8 0.1 1.0 0.3 A(DC) 5.6 7.0 0.2 0.2 Parameter Symbol Limits Unit 1.2 1.5Max 0.3 2SB1386 Collector power dissipation 2SB1412 0.3 0.1 0.6 2.3 0.1 C C 1 Single pulse, Pw=10ms 2 When mounted on a 40x40x0.7 mm ceramic board. 3 Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm2 or larger. !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio 2SB1386,2SB1412 2SB1326 hFE fT Cob Symbol BVCBO BVCEO BVEBO ICBO IEBO Min. -30 -20 -6 - - - 82 120 - - Typ. - - - - - - - - 120 60 Max. - - - -0.5 -0.5 -1.0 390 390 - - Unit V V V A A V - - MHz pF IC=-50A IC=-1mA IE=-50A VCB=-20V VEB=-5V IC/IB=-4A/-0.1A VCE=-2V, IC=-0.5A VCE=-6V, IE=50mA, f=30MHz VCB=-20V, IE=0A, f=1MHz Conditions VCE(sat) Transition frequency Output capacitance Measured using pulse current. !Packaging specifications and hFE Package Code Type 2SB1386 2SB1412 2SB1326 hFE PQR PQR QR - - - Basic ordering unit (pieces) T100 1000 Taping TL 2500 - TV2 2500 - - http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 2SB1412 Elektronische Bauelemente PNP Silicon Low Frequency Transistor !Electrical characteristic curves COLLECTOR CURRENT : IC (A) -10 VCE=-2V -5 COLLECTOR CURRENT : IC (A) -5 DC CURRENT GAIN : hFE -2 -1 -500m -200m -100m -50m -20m -10m -5m -2m -1m 0 Ta=100C 25C -25C -4 -50mA -45mA -40mA -35mA Ta=25C mA -30 A -25m -20mA -15mA 5k 2k 1k 500 200 100 50 20 10 Ta=25C -3 -10mA VCE=-5V -2 -5mA -2V -1V -1 IB=0A 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 BASE TO EMITTER VOLTAGE : VBE (V) 5 -1m -2m -5m-0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 0 -0.4 -0.8 -1.2 -1.6 -2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current () COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 5k 2k DC CURRENT GAIN : hFE VCE=-1V 5k 2k VCE=-2V -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 Ta=25C 1k 500 200 100 50 20 10 5 -1m-2m -5m-0.01-0.02-0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 DC CURRENT GAIN : hFE 1k 500 200 100 50 20 10 5 -1m-2m -5m-0.01-0.02-0.05-0.1 -0.2 -0.5 -1 -2 -5 -10 Ta=100C 25C -25C Ta=100C 25C -25C IC/IB=50/1 40/1 /1 30/1 10/1 -2m -5m -0.01-0.02-0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current () Fig.5 DC current gain vs. collector current () Fig.6 Collector-emitter saturation voltage vs. collector current () COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) lC/lB=10 lC/lB=30 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -5 -2 -1 -0.5 -0.2 -0.1 lC/lB=40 -25C 25C Ta=100C 25C Ta=100C 25C -25C -25C Ta=100C -0.05 -0.02 -0.01 -2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 -2m -5m -0.01-0.02-0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 -2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.7 Collector-emitter saturation voltage vs. collector current () Fig.8 Collector-emitter saturation voltage vs. collector current () Fig.9 Collector-emitter saturation voltage vs. collector current (IV) http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 2SB1412 Elektroni sche Bauelemente PNP Silicon Low Frequency Transistor COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) TRANSEITION FREQUENCY : fT (MHz) lC/lB=50 -25C 25C Ta=100C -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 500 200 100 50 20 10 5 2 1 1 2 5 10 20 Ta=25C VCE=-6V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) -5 1 000 1000 500 Ta=25C f=1MHz IE=0A 200 100 50 20 10 -0.1 -0.2 -2m -5m -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 50 100 200 500 1000 -0.5 -1 -2 -5 -10 -20 -50 COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.10 Collector-emitter saturation voltage vs. collector current (V) Fig.11 Gain bandwidth product vs. emitter current Fig.12 Collector output capacitance vs. collector-base voltage EMITTER INTPUT CAPACITANCE : Cib (pF) 1000 500 COLLECTOR CURRENT : IC (A) Ta=25C f=1MHz IC=0A 100 50 20 10 Ta=25C Single nonrepetitive pulse Pw 200 100 50 5 2 1 500m 200m 100m 50m 20m 10m Pw =1 DC 0 =1 ms ms 00 20 10 -0.1 -0.2 -0.5 -1 -2 -5 -10 0.2 0.5 1 2 5 10 20 50 100 200 500 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO EMITTER VOLTAGE : -VCE (V) Fig.13 Emitter input capacitance vs. emitter-base voltage Fig.14 Safe operation area (2SB1412) http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3 |
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